COVERAGE OF ELECTROCHEMICAL TRANSDUCERS MADE IN Si- TECHNOLOGY WITH ENZYME MEMBRANES

Abstract

Some methods to cover electrochemical sensors based on silicon technology with enzyme membranes using different polymer systems are known. The main requirements of enzyme membranes at electrochemical sensor elements based on silicon technology, such as ion sensitive field effect transistors (ISFETs) and thin film noble metal electrodes (TFMEs), are good adhesion at the sensor surface and minimal diffusion resistance for substrates and products. Furthermore the amount of enzyme molecules immobilized at the active surface of the sensor element influences the functional Parameters of the biosensor, e.g. lifetime, sensitivity, linearity, and response time, which should be in the same range as for the enzyme membranes of first generation biosensors. In this paper we describe new covering procedures that have been studied in order to find out technologies compatible to microelectronic Production technology used for the fabrication of TFMEs (FIG 1) and multigate ISFETs.